• Laboratory for Plasma Processing of Materials   University of Maryland Institute for Research in Electronics and Applied Physics
    Institute for Research in Electronics and Applied Physics

    Laboratory for Plasma Processing of Materials

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    Books

    1. G. S. Oehrlein, T.E.F.M. Standaert, P. J. Matsuo, Chapter 9, Plasma etching of low dielectric constant materials, Spring Series in Advanced Microelectronics, Vol. 9, "Low Dielectric Constant Materials for IC Applications" (Springer, Heidelberg, 2002).

    2. G. S. Oehrlein, K. Maex, Y.-C. Joo, S. Ogawa, and J. T. Wetzel, editors, "Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectric," MRS Symposium Proceedings Volume 612 (Warrendale, 2001).

    Publications

    1. "Studies of Fluorocarbon Film Deposition and Its Correlation with Etched Trench Sidewall Angle by Employing a Gap Structure Using C4F8/Ar and CF4/H2 Based Capacitively Coupled Plasmas," Li Ling, X. Hua, L. Zheng, G. S. Oehrlein, E. Hudson, and P. Jiang, J. Vac. Sci. Technol. B 26 [1], 11-22 (2008).

    2. "Plasma-Surface Interactions of Model Polymers for Advanced Photoresists Using C4F8/Ar Discharges and Energetic Ar+ Ion Beams," S. Engelmann, R. Bruce, T. Kwon, R. Phaneuf, G. S. Oehrlein, Y. C. Bae, C. Andes, D. Graves, D. Nest, E. A. Hudson, P. Lazzeri, E. Iacob and M. Anderle, J. Vac. Sci. & Technol. B 25, 1353 (2007).

    3. "Near-Surface Modification of Polystyrene by Ar+: Molecular Dynamics Simulations and Experimental Validation," J. J. Vegh, D. Nest, D. B. Graves, R. Bruce, S. Engelmann, T. Kwon, R. J. Phaneuf, G. S. Oehrlein, B. K. Long, and C. G. Willson, Appl. Phys. Letts. 91 [23], 233113 (2007).

    4. "On the Photoresist Stripping and Eamage of Ultralow k Dielectric Materials Using Remote H2- and D2-Based Discharges," G. J. Stueber, G. S. Oehrlein, P. Lazzeri, M. Bersani, M. Anderle, R. McGowan, and E. Busch, J. Vac. Sci. Technol. B 25, 1593 (2007).

    5. "Study of Photoresist Etching and Roughness Formation in Electron-Beam Generated Plasmas," B. J. Orf, S. G. Walton, D. Leonhardt, and G. S. Oehrlein, J. Vac. Sci. Technol. B 25, 779 (2007).

    6. "Transient Roughening Behaviour and Spontaneous Pattern Formation During Plasma Etching of Nanoporous Silica," T. Kwon, H. C. Kan, G. S. Oehrlein, and R. J. Phaneuf, Nanotechnology 18, 055305 (2007).

    7. "Time of Flight Secondary Ion Mass Spectroscopy Investigation of Ultralow-k Dielectric Modifications in Hydrogen and Deuterium Plasmas," P. Lazzeri, G. J. Stueber, G. S. Oehrlein, R. McGowan, E. Busch, S. Pederzoli, M. Bersani, M. anderle, J. Vac. Sci. & Technol. B 24 [6], 2695 (2006).

    8. "Studies of Plasma Surface Interactions During Short Time Plasma Etching of 193 and 248 nm Photoresist Materials," H. Zuefeng, S. Engelmann, G. S. Oehrlein, P. Jiang, P. Lazzeri, E. Iacob, and M. Anderle, J. Vac. Sci. & Technol. B 24 [4], 1850, (2006).

    9. "Damage of Ultralow k Materials During Photoresist Mask Stripping Process," J. Xuefeng, K. Ming-Shu, G. S. Oehrlein, P. Lazzeri, E. Iacob, M. Anderle, C. K. Inoki, T. S. Kuan, P. Jiang, and Wu Wen-Li, J. Vac. Sci. & Technol. B 24 [3], 1238 (2006).

    10. "Nanoscale Layer Etching by Short-Time Exposure of Substrates to Gas Discharges Using Moving Patterned Shutter," G. S. Oehrlein, X. Hua, C. Stolz, and P. Jiang, J. Vac. Sci. & Technol. B 24 [1], 279 (2006).

    11. "Plasma-surface interactions of nanoporous silica during plasma-based pattern transfer using C4F8 and C4F8/Ar gas mixtures," X. Hua, C. Stolz, G. S. Oehrlein, P. Lazzeri, N. Coghe, M. Anderle, C. K. Inoki, T. S. Kuan, and P. Jiang, J. Vac. Sci. Technol. A 23, 151 (2005).

    12. "Studies of film deposition in fluorocarbon plasmas employing a small gap structure," L. Zheng, L. Ling, X. Hua, G. S. Oehrlein, and E. A. Hudson, J. Vac. Sci. Technol. A 23, 634 (2005).

    13. "The role of C2F4, CF2, and ions in C4F8/Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor," M. J. Barela, H. M. Anderson, and G. S. Oehrlein, J. Vac. Sci. Technol. A 23, 408 (2005).

    14. "Porosity-induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics," P. Lazzeri, X. Hua, G. S. Oehrlein, M. Barozzi, E. Iocab, and M. Anderle, J. Vac. Sci. Technol. B 23, 1491 (2005).

    15. "Substrate interconnect technologies for 3-D MEMS packaging," B. Morgan, X. Hua, T. Iguchi, T. Tomioka, G. S. Oehrlein, and R. Ghodssi, Microelectron. Engr. 81, 106 (2005).

    16. "Surface chemical changes of aluminum during NF3-based plasma processing used for in-situ chamber cleaning," X. Li, X. Hua, L. Ling, G. S. Oehrlein, E. Karwacki, and B. Ji, J. Vac. Sci. Technol. A 22 (1), 158 (2004).

    17. "Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbine," T.E.F.M. Standaert, C. Hedlund, E. A. Joseph, G. S. Oehrlein, and T. J. Dalton, J. Vac. Sci. Technol. A 22 (1), 53 (2004).

    18. "Study of C4F8/CO and C4F8/Ar/CO plasmas for highly selective etching of organosilicate glass (OSG) over Si3N4 and SiC," L. Ling, X. Hua, X. Li, G. S. Oehrlein, F. G. Celii, K.H.R. Kirmse, P. Jiang, Y. Wang, and H. M. Anderson, J. Vac. Sci. Technol. A 22 (2), 236 (2004).

    19. "Molecular dynamics simulations of Ar+-induced transport of fluorine through fluorocarbon films," D. Humbird, D. B. Graves, X. Hua, and G. S. Oehrlein, Appl. Phys. Lett. 84 (7), 1073 (2004).

    20. "Properties of C4F8 Inductively Coupled Plasmas, Part I: Studies of Ar/C-C4F8 Magnetically Confined Plasmas for Etching of SiO2," Xi Li, Li Ling, X. Hua, G. S. Oehrlein, Y. Wang, A. V. Vasenkov, and M. J. Kushner, J. Vac. Sci. Technol. A 22, 500 (2004).

    21. "Properties of C-C4F8 Inductively Coupled Plasmas, Part II: Plasma Chemistry, Reaction Mechanism of Modeling of Ar/c-C4F8/02 Discharges," A. V. Vasenkov, Xi. Li, G. S. Oehrlein, and M. J. Kushner, J. Vac. Sci. Technol. A 22, 511 (2004).

    22. "Investigation of Surface Modifications of 193 and 248 nm Photoresist Materials During Low-Pressure Plasma Etching," L. Ling, X. Hua, X. Li, G. S. Oehrlein, E. Hudson, P. Lazzeri, N. Coghe, M. Anderle, J. Vac. Sci. Technol. B 22, 2594 (2004).

    23. "Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas," X. Li, L. Ling, X. Hua, M. Fukasawa, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A 21 (1), 284 (2003).

    24. "Study of C4F8/N2 and C4F8/Ar/N2 plasmas for highly selective organosilicate glass (OSG) etching over Si3N4 and SiC," X. Hua, X. Wang, D. Fuentevilla, G. S. Oehrlein, F. G. Celii and K.H.R. Kirmse, J. Vac. Sci. Technol. A 21 (5), 1708 (2003).

    25. "Spatially resolved mass spectrometric sampling of inductively coupled plasmas using a movable sampling orifice," X. Li, G. S. Oehrlein, M. Schaepkens, R. E. Ellefson, and L. C. Frees, J. Vac. Sci. Technol. A 21 (6), 1971 (2003).

    26. "Characteristics of C4F8 plasmas with Ar, Ne and He additives for SiO2 etching in an inductively coupled plasma (ICP) reactor," Xi Li, Li Ling, X. Hua, G. S. Oehrlein, Y. Wang, and H. M. Anderson, J. Vac. Sci. Technol. A 21 (6), 1955 (2003).

    27. "Fluorocarbon-based plasma etching of SiO2: comparison of C4F6/Ar and C4F8/Ar discharges," X. Li, X. Hua, L. Ling, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A 20, 2052 (2002).

    28. "A review of SiO2 etching studies in inductively coupled fluorocarbon plasmas," M. Schaepkens and G. S. Oehrlein, J. Electrochem. Soc. 148, C211 (2001).

    29. "Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas," B.E.E. Kastenmeier, P.J. Matsuo, G.S. Oehrlein, R.E. Ellefson, and L.C. Frees, J. Vac. Sci. Technol. A 19, 25-30 (2001).

    30. "Fabrication and performance limits of sub-0.1 mm Cu interconnects," T.S. Kuan, C.K. Inoki, G.S. Oehrlein, K. Rose, Y.-P. Zhao, G.-C. Wang, S.M. Rossnagel, and C. Cabral, Mat. Res. Soc. Symp. Proc. 612, D7.1.1 (2001).

    31. "High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly-arylene ether," T.E.F.M. Standaert, P.J. Matsuo, X. Li, G.S. Oehrlein, T.-M. Lu, R. Gutmann, C.T. Rosenmayer, J.W. Bartz, J.G. Langan, and W.R. Entley, J. Vac. Sci. Technol. A 19, 435-446 (2001).

    32. "Development of a Slurry Employing a Unique Silica Abrasive for the CMP of Cu Damascene Structures," P. Wrschka, J. Hernandez, G.S. Oehrlein, J.A. Negrych, G. Haag, P. Rau, and J.E. Currie, J. Electrochem. Soc. 148, G321-G325 (2001).

    33. "Surface Chemistry Studies of Copper Chemical-Mechanical Planarization," J. Hernandez, P. Wrschka, and G.S. Oehrlein, J. Electrochem. Soc. 148, G389-G397 (2001).

    34. "Gas-phase studies in inductively coupled fluorocarbon plasmas," M. Schaepkens, I. Martini, E.A. Sanjuan, X. Li, G.S. Oehrlein, W.L. Perry, and H.M. Anderson, J. Vac. Sci. Technol. A 19, 2946-2957 (2001).

    35. "Using a quartz crystal microbalance for low energy ion beam etching studies," M.F. Doemling, B. Lin, N.R. Rueger, G.S. Oehrlein, R.A. Haring, and Y.H. Lee, J. Vac. Sci. Technol. A 18 (1), 232-236 (2000).

    36. "Gas utilization in remote plasma cleaning and stripping applications," B.E.E. Kastenmeier, G.S. Oehrlein, John G. Langan, and William R. Entley, J. Vac. Sci. Technol. A 18 (5), 2102-2107 (2000).

    37. "Etching of xerogel in high-density fluorocarbon plasmas," T.E.F.M. Standaert, E.A. Joseph, G.S. Oehrlein, A. Jain, W.N. Gill, P.C. Wayner, Jr., and J.L. Plawsky, J. Vac. Sci. Technol. A 18 (6), 2742-2748 (2000).

    38. "Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas," M. Schaepkens, G.S. Oehrlein, and J.M. Cook, J. Vac. Sci. Technol. B 18 (2), 848-855 (2000).

    39. "Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas", M. Schaepkens, G.S. Oehrlein, and J.M. Cook, J. Vac. Sci. Technol. B 18 (2), 856-863 (2000).

    40. "Chemical Mechanical Planarization of Copper Damascene Structures," P. Wrschka, J. Hernandez, G.S. Oehrlein, and J. King, J. Electrochem. Soc. 147, 706-712 (2000).

    41. "Pattern transfer into low dielectric constant materials by high-density plasma etching," G.S. Oehrlein, T.E.F.M. Standaert, P.J. Matsuo, Solid State Technol. 43 (5): 125 (2000).

    42. "Surface issues in plasma etching," G.S. Oehrlein, M.F. Doemling, B.E.E. Kastenmeier, P.J. Matsuo, N.R. Rueger, M. Schaepkens, T.E.F.M. Standaert, IBM J. Res. Dev. 43 (1/2) (1999).

    43. "Study of the SIO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism," M. Schaepkens, T.E.F.M. Standaert, N.R. Rueger, P.G.M. Sebel, G.S. Oehrlein, and J.M. Cook, J. Vac. Sci. Technol. A 17 (1), 26-37 (1999).

    44. "Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2," T.E.F.M. Standaert, P.J. Matsuo, S.D. Allen, G.S. Oehrlein, and T. J. Dalton, J. Vac. Sci. Technol. A 17 (3), 741-748 (1999).

    45. "Silicon etching in NF3/O2 remote microwave plasmas," P.J. Matsuo, B.E.E. Kastenmeier, G.S. Oehrlein, and J.G. Langan, J. Vac. Sci. Technol. A 17 (5), 2431-2437 (1999).

    46. "Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor," N.R. Rueger, M.F. Doemling, M. Schaepkens, J.J. Beulens, T.E.F.M. Standaert, and G.S. Oehrlein, J. Vac. Sci. Technol. A 17 (5), 2492-2502 (1999).

    47. "Highly selective etching of silicon nitride over silicon and silicon dioxide," B.E.E. Kastenmeier, P. J. Matsuo, and G.S. Oehrlein, J. Vac. Sci. Technol. A 17 (6), 3179-3184 (1999).

    48. "Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing," M. Schaepkens, N.R. Rueger, J.J. Beulens, X. Li, T.E.F.M. Standaert, P.J. Matsuo, and G.S. Oehrlein, J. Vac. Sci. Technol. A 17 (6), 3272-3280 (1999).

    49. "Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch," P.J. Matsuo, T.E.F.M. Standaert, S.D. Allen, G.S. Oehrlein, and T.J. Dalton, J. Vac. Sci. Technol. B 17 (4), 1435-1447 (1999).

    50. "Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates," M. Schaepkens, G.S. Oehrlein, C. Hedlund, L. B. Jonsson, and H.-O. Blom, J. Vac. Sci. Technol. A 16 (6), 3281 (1998).

    51. "Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas," M. Schaepkens, R.C.M. Bosch, T.E.F.M. Standaert, G.S. Oehrlein, and J.M. Cook, J. Vac. Sci. Technol. A 16 (4), 2099-2107 (1998).

    52. "Asymmetric microetching during inductively coupled plasma oxide etching in the presence of a weak magnetic field," M. Schaepkens and G.S. Oehrlein, Appl. Phys. Lett. 72 (11), 1293 (1998).

    53. "High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer," T.E.F.M. Standaert, M. Schaepkens, N.R. Rueger, P.G.M. Sebel, G.S. Oehrlein, and J.M. Cook, J. Vac. Sci. Technol. A 16 (1), 239-249 (1998).

    54. "Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures," B.E. E. Kastenmeier, P.J. Matsuo, G.S. Oehrlein, and J.G. Langan, J. Vac. Sci. Technol. A 16 (4), 2047-2056 (1998).

    55. "Photoresist erosion studied in an inductively coupled plasma reactor employing CHF3," M.F. Doemling, N.R. Rueger, G.S. Oehrlein, and J.M. Cook, J. Vac. Sci. Technol. B 16 (4), 1998-2005 (1998).

    56. "Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching," Y. Hsu, T.E.F.M. Standaert, G.S. Oehrlein, T.S. Kuan, E. Sayre, K. Rose, K.Y. Lee, and S.M. Rossnagel, J. Vac. Sci. Technol. B 16 (6), 3344-3348 (1998).

    57. "Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon," P.J. Matsuo, B.E.E. Kastenmeier, J.J. Beulens, and G.S. Oehrlein, J. Vac. Sci. Technol. A 15 (4), 1801-1813 (1997).

    58. "Surface processes in low pressure plasmas," G.S. Oehrlein, Surface Sci. 386, 222 (1997).

    59. "Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor," N.R. Rueger, J.J. Beulens, M. Schaepkens, M.F. Doemling, J.M. Mirza, T.E.F.M. Standaert, and G.S. Oehrlein, J. Vac. Sci. Technol. A 15, 1881-1889 (1997).

    60. "Study of plasma-surface interactions: Chemical dry etching and high-density plasma etching," G.S. Oehrlein, P.J. Matsuo, M.F. Doemling, N.R. Rueger, B.E.E. Kastenmeier, M. Schaepkens, T. Standaert, and J.J. Beulens, Plasma Sources Sci. Technol. (UK) 5 (2), 193-199 (1996).

    61. "Chemical downsteam etching of silicon-nitride and poly-silicon using CF4/O2/N2: Surface chemical effects of O2/N2 additives," J.J. Beulens, B.E.E. Kastenmeier, P.J. Matsuo, and G.S. Oehrlein, Appl. Phys. Lett. (1995).

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